A walk on the frontier of energy electronics with power ultra-wide bandgap oxides and ultra-thin neuromorphic 2D materials

Altres ajuts: the ICN2 is funded also by the CERCA programme / Generalitat de CatalunyaUltra-wide bandgap (UWBG) semiconductors and ultra-thin two-dimensional materials (2D) are at the very frontier of the electronics for energy management or energy electronics. A new generation of UWBG semiconductors will open new territories for higher power rated power electronics and deeper ultraviolet optoelectronics. Gallium oxide - GaO(4.5-4.9 eV), has recently emerged as a suitable platform for extending the limits which are set by conventional (-3 eV) WBG e.g. SiC and GaN and transparent conductive oxides (TCO) e.g. In2O3, ZnO, SnO2. Besides, GaO, the first efficient oxide semiconductor for energy electronics, is opening the door to many more semiconductor oxides (indeed, the largest family of UWBGs) to be investigated. Among these new power electronic materials, ZnGa2O4 (-5 eV) enables bipolar energy electronics, based on a spinel chemistry, for the first time. In the lower power rating end, power consumption also is also a main issue for modern computers and supercomputers. With the predicted end of the Moores law, the memory wall and the heat wall, new electronics materials and new computing paradigms are required to balance the big data (information) and energy requirements, just as the human brain does. Atomically thin 2D-materials, and the rich associated material systems (e.g. graphene (metal), MoS2 (semiconductor) and h-BN (insulator)), have also attracted a lot of attention recently for beyond-silicon neuromorphic computing with record ultra-low power consumption. Thus, energy nanoelectronics based on UWBG and 2D materials are simultaneously extending the current frontiers of electronics and addressing the issue of electricity consumption, a central theme in the actions against climate chang

Above-Bandgap Photovoltages in Antiferroelectrics

Altres ajuts: COST Action StableNextSol project MP1307The closed circuit photocurrent and open circuit photovoltage of antiferroelectric thin films were characterized both in their ground (antipolar) state and in their polarized state. A sharp transition happens from near zero to large photovoltages as the polarization is switched on, consistent with the activation of the bulk photovoltaic effect. The AFE layers have been grown by a solution processing method (sol?gel synthesis followed by spin coating deposition) onto fluorine-doped tin oxide (FTO), a transparent conducting oxide with low sheet resistance and a higher resilience to high-temperature processing than indium tin oxide and a standard for solar cells such as organometal trihalide perovskites. Light absorption confirmed that the PZO films are, as expected, wide-band gap semiconductors with a gap of 3.7.8 eV and thus highly absorbing in the near-ultraviolet range. On a virgin sample, there is no shortcircuit photocurrent, consistent with the antipolar nature of the ground state. As an external bias voltage is applied, the current remains negligible until suddenly, at the coercive voltage, a spike is observed, corresponding to the transient displacement current caused by the onset of polarization

Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics

Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. Here, we review our integration of WBG and ultra WBG semiconductor oxides into different solar cells architectures where they have the role of transparent conductive electrodes and/or barriers bringing unique functionalities into the structure such above bandgap voltages or switchable interfaces. We also give an overview of the state-of-the-art and perspectives for the emerging semiconductor β- GaO, which is widely forecast to herald the next generation of power electronic converters because of the combination of an UWBG with the capacity to conduct electricity. This opens unprecedented possibilities for the monolithic integration in solar cells of both self-powered logic and power electronics functionalities. Therefore, WBG and UWBG oxides have enormous promise to become key enabling technologies for the zero emissions smart integration of the internet of things

Performance and stability of mixed FAPbI3(0.85)MAPbBr3(0.15) halide perovskite solar cells under outdoor conditions and the effect of low light irradiation

We demonstrate for the first time, the real lifetime response of mixed halide perovskite solar cells (PSCs) for >1000 h under outdoor conditions and the exceptional photoresponse observed at low-light intensities attributed to the ionic-electronic nature of the material. The investigated devices were fabricated by utilizing mixed perovskites containing formamidinium (FA) and methylammonium (MA) cations, in a one step solution-process method through a solvent engineering approach. The devices' architecture is FTO/TiO (blocking layer) TiO (mesoporous)/FAPbIMAPbBr/Spiro-OMeTAD/Au. Notably, low short circuit current (J) was observed at low light intensities (1000 h under real outdoor conditions and the strong ionic component observed at low light irradiation

Carbon incorporation in MOCVD of MoS2 thin films grown from an organosulfide precursor

Altres ajuts: CERCA Programme/Generalitat de CatalunyaWith the rise of two-dimensional (2D) transition-metal dichalcogenide (TMD) semiconductors and their prospective use in commercial (opto)electronic applications, it has become key to develop scalable and reliable TMD synthesis methods with well-monitored and controlled levels of impurities. While metal-organic chemical vapor deposition (MOCVD) has emerged as the method of choice for large-scale TMD fabrication, carbon (C) incorporation arising during MOCVD growth of TMDs has been a persistent concern-especially in instances where organic chalcogen precursors are desired as a less hazardous alternative to more toxic chalcogen hydrides. However, the underlying mechanisms of such unintentional C incorporation and the effects on film growth and properties are still elusive. Here, we report on the role of C-containing side products of organosulfur precursor pyrolysis in MoS2 thin films grown from molybdenum hexacarbonyl Mo(CO)6 and diethyl sulfide (CH3CH2)2S (DES). By combining in situ gas-phase monitoring with ex situ microscopy and spectroscopy analyses, we systematically investigate the effect of temperature and Mo(CO)6/DES/H2 gas mixture ratios on film morphology, chemical composition, and stoichiometry. Aiming at high-quality TMD growth that typically requires elevated growth temperatures and high DES/Mo(CO)6 precursor ratios, we observed that temperatures above DES pyrolysis onset (â 600 °C) and excessive DES flow result in the formation of nanographitic carbon, competing with MoS2 growth. We found that by introducing H2 gas to the process, DES pyrolysis is significantly hindered, which reduces carbon incorporation. The C content in the MoS2 films is shown to quench the MoS2 photoluminescence and influence the trion-To-exciton ratio via charge transfer. This finding is fundamental for understanding process-induced C impurity doping in MOCVD-grown 2D semiconductors and might have important implications for the functionality and performance of (opto)electronic devices

Origin of the Large Negative Electrocaloric Effect in Antiferroelectric PbZrO3

We have studied the electrocaloric response of the archetypal antiferroelectric PbZrO3 as a function of voltage and temperature in the vicinity of its antiferroelectric-paraelectric phase transition. Large electrocaloric effects of opposite signs, ranging from an electro-cooling of -3.5 K to an electro-heating of +5.5 K, were directly measured with an infrared camera. We show by calorimetric and electromechanical measurements that the large negative electrocaloric effect comes from an endothermic antiferroelectric-ferroelectric switching, in contrast to dipole destabilization of the antiparallel lattice, previously proposed as an explanation for the negative electrocaloric effect of antiferroelectrics.Comment: Article (17 pages) and supplemental material (12 pages) present in .pdf fil

Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity

The room temperature hole conductivity of the ultra wide bandgap semiconductor beta Ga2O3 is a pre-requisite for developing the next-generation electronic and optoelectronic devices based on this oxide. In this work, high-quality p-type beta-Ga2O3 thin films grown on r-plane sapphire substrate by metalorganic chemical vapor deposition (MOCVD) exhibit Rho = 50000Ohm.cm resistivity at room temperature. A low activation energy of conductivity as Ea2=170 meV was determined, associated to the oxygen - gallium native acceptor defect complex. Further, taking advantage of cation (Zn) doping, the conductivity of Ga2O3:Zn film was remarkably increased by three orders of magnitude, showing a long-time stable room-temperature hole conductivity with the conductivity activation energy of around 86 meV.Comment: 21pages; 9figure

Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale

The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale

Effects of hospital facilities on patient outcomes after cancer surgery: an international, prospective, observational study

Background Early death after cancer surgery is higher in low-income and middle-income countries (LMICs) compared with in high-income countries, yet the impact of facility characteristics on early postoperative outcomes is unknown. The aim of this study was to examine the association between hospital infrastructure, resource availability, and processes on early outcomes after cancer surgery worldwide.Methods A multimethods analysis was performed as part of the GlobalSurg 3 study-a multicentre, international, prospective cohort study of patients who had surgery for breast, colorectal, or gastric cancer. The primary outcomes were 30-day mortality and 30-day major complication rates. Potentially beneficial hospital facilities were identified by variable selection to select those associated with 30-day mortality. Adjusted outcomes were determined using generalised estimating equations to account for patient characteristics and country-income group, with population stratification by hospital.Findings Between April 1, 2018, and April 23, 2019, facility-level data were collected for 9685 patients across 238 hospitals in 66 countries (91 hospitals in 20 high-income countries; 57 hospitals in 19 upper-middle-income countries; and 90 hospitals in 27 low-income to lower-middle-income countries). The availability of five hospital facilities was inversely associated with mortality: ultrasound, CT scanner, critical care unit, opioid analgesia, and oncologist. After adjustment for case-mix and country income group, hospitals with three or fewer of these facilities (62 hospitals, 1294 patients) had higher mortality compared with those with four or five (adjusted odds ratio [OR] 3.85 [95% CI 2.58-5.75]; p<0.0001), with excess mortality predominantly explained by a limited capacity to rescue following the development of major complications (63.0% vs 82.7%; OR 0.35 [0.23-0.53]; p<0.0001). Across LMICs, improvements in hospital facilities would prevent one to three deaths for every 100 patients undergoing surgery for cancer.Interpretation Hospitals with higher levels of infrastructure and resources have better outcomes after cancer surgery, independent of country income. Without urgent strengthening of hospital infrastructure and resources, the reductions in cancer-associated mortality associated with improved access will not be realised

Healthcare Access and Quality Index based on mortality from causes amenable to personal health care in 195 countries and territories, 1990-2015 : a novel analysis from the Global Burden of Disease Study 2015

Background National levels of personal health-care access and quality can be approximated by measuring mortality rates from causes that should not be fatal in the presence of effective medical care (ie, amenable mortality). Previous analyses of mortality amenable to health care only focused on high-income countries and faced several methodological challenges. In the present analysis, we use the highly standardised cause of death and risk factor estimates generated through the Global Burden of Diseases, Injuries, and Risk Factors Study (GBD) to improve and expand the quantification of personal health-care access and quality for 195 countries and territories from 1990 to 2015. Methods We mapped the most widely used list of causes amenable to personal health care developed by Nolte and McKee to 32 GBD causes. We accounted for variations in cause of death certification and misclassifications through the extensive data standardisation processes and redistribution algorithms developed for GBD. To isolate the effects of personal health-care access and quality, we risk-standardised cause-specific mortality rates for each geography-year by removing the joint effects of local environmental and behavioural risks, and adding back the global levels of risk exposure as estimated for GBD 2015. We employed principal component analysis to create a single, interpretable summary measure-the Healthcare Quality and Access (HAQ) Index-on a scale of 0 to 100. The HAQ Index showed strong convergence validity as compared with other health-system indicators, including health expenditure per capita (r= 0.88), an index of 11 universal health coverage interventions (r= 0.83), and human resources for health per 1000 (r= 0.77). We used free disposal hull analysis with bootstrapping to produce a frontier based on the relationship between the HAQ Index and the Socio-demographic Index (SDI), a measure of overall development consisting of income per capita, average years of education, and total fertility rates. This frontier allowed us to better quantify the maximum levels of personal health-care access and quality achieved across the development spectrum, and pinpoint geographies where gaps between observed and potential levels have narrowed or widened over time. Findings Between 1990 and 2015, nearly all countries and territories saw their HAQ Index values improve; nonetheless, the difference between the highest and lowest observed HAQ Index was larger in 2015 than in 1990, ranging from 28.6 to 94.6. Of 195 geographies, 167 had statistically significant increases in HAQ Index levels since 1990, with South Korea, Turkey, Peru, China, and the Maldives recording among the largest gains by 2015. Performance on the HAQ Index and individual causes showed distinct patterns by region and level of development, yet substantial heterogeneities emerged for several causes, including cancers in highest-SDI countries; chronic kidney disease, diabetes, diarrhoeal diseases, and lower respiratory infections among middle-SDI countries; and measles and tetanus among lowest-SDI countries. While the global HAQ Index average rose from 40.7 (95% uncertainty interval, 39.0-42.8) in 1990 to 53.7 (52.2-55.4) in 2015, far less progress occurred in narrowing the gap between observed HAQ Index values and maximum levels achieved; at the global level, the difference between the observed and frontier HAQ Index only decreased from 21.2 in 1990 to 20.1 in 2015. If every country and territory had achieved the highest observed HAQ Index by their corresponding level of SDI, the global average would have been 73.8 in 2015. Several countries, particularly in eastern and western sub-Saharan Africa, reached HAQ Index values similar to or beyond their development levels, whereas others, namely in southern sub-Saharan Africa, the Middle East, and south Asia, lagged behind what geographies of similar development attained between 1990 and 2015. Interpretation This novel extension of the GBD Study shows the untapped potential for personal health-care access and quality improvement across the development spectrum. Amid substantive advances in personal health care at the national level, heterogeneous patterns for individual causes in given countries or territories suggest that few places have consistently achieved optimal health-care access and quality across health-system functions and therapeutic areas. This is especially evident in middle-SDI countries, many of which have recently undergone or are currently experiencing epidemiological transitions. The HAQ Index, if paired with other measures of health-systemcharacteristics such as intervention coverage, could provide a robust avenue for tracking progress on universal health coverage and identifying local priorities for strengthening personal health-care quality and access throughout the world. Copyright (C) The Author(s). Published by Elsevier Ltd.Peer reviewe